PN结的形成及其特性

论文编号:WLX072  字数:7613,页数:19

摘    要
 现在电子技术的不断发展，半导体科学技术已成为现代最重要的科学技术之一。而作为大多数半导体器件的核心——PN结，也受到社会各界的关注和重视。当然PN结是构成半导体器件的基本单元，其中，最简单的晶体二极管就是由PN结构成的。本文就PN结形成的物理机制来阐述PN结的单向导电性，击穿特性，电容特性及温度特性等。
关键词: 半导体 漂移运动 扩散 自由载流子 PN结的形成

Abstract
 Now electron technology Unceasingly develops, semiconductor science and technology already becomes one of the most important science and technology in the modern times. PN junction is considered to be the core of great majority semiconductor devices, also, be caught the general public attention and be taken seriously. This text is to explain and discuss the forms and characteristic of      PN-junction. Certainly PN-junction forms the fundamental element of the semiconductor device, among them, the simplest crystal diode is made of PN junction . Therefore, studying the characteristic of PN-junction is to discuss the characteristic of crystal diode in fact. This text passes through the studying to crystal diode to expound on One-way conductivity.Breakdown of Characteristic capacitance characteristics, Temperature characteristics and so on of PN junction
Keywords: Semiconductor  Drift Movement  Proliferation  Free carrier  The forms of PN-junction

目    录
摘    要 i
Abstract ii
第一章 绪论 1
1.1  研究动机与目的 1
1.2  论文内容概述 1
第二章 半导体的基础知识 2
2.1  本征半导体 2
2.2  杂质半导体 2
2.3  半导体中的电流 4
第三章 PN结 6
3.1  PN结的形成 6
3.2  PN结的单向导电性 8
3.3  PN结的击穿特性 10
3.4  PN结的电容特性 11
3.5  PN结的温度特性 13
第四章 结论 14
致   谢 15
参考文献 16

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